RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
US10432152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2015 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Dec 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device includes multiple ceramic capacitors and a current path structure. A first ceramic capacitor includes a first ceramic material between first and second electrodes. A second ceramic capacitor includes a second ceramic material between third and fourth electrodes. The second ceramic material has a higher Q than the first ceramic material. The current path structure includes a lateral conductor located between the first and second ceramic materials, and first and second vertical conductors that extend from first and second ends of the lateral conductor to a device surface. The device may be coupled to a substrate of a packaged RF amplifier device, which also includes a transistor. For example, the device may form a portion of an output impedance matching circuit coupled between a current carrying terminal of the transistor and an output lead of the RF amplifier device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.