Semiconductor device, related manufacturing method, and related electronic device
US10433435B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include the following elements: a first substrate; a second substrate; a dielectric layer, which may be positioned between the first substrate and the second substrate and may have a hole; a first conductive member, which may be positioned in the dielectric layer; a second conductive member, which may be positioned in the dielectric layer, may be spaced from the first conductive member, and may be positioned closer to the second substrate than the first conductive member; and a third conductive member, which may contact both the first conductive member and the second conductive member through the hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.