Dielectric substrate comprising unsintered polytetrafluoroethylene and methods of making the same
US10435534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2016 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Apr 6, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08K2003/2241
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
In an embodiment, a dielectric substrate comprises an unsintered polytetrafluoroethylene; and a high dielectric constant filler, wherein the dielectric constant of the high dielectric constant filler is greater than or equal to 35; wherein the dielectric substrate has a specific gravity of greater than or equal to 90% of a calculated theoretical density of the dielectric substrate, wherein the theoretical specific gravity is calculated based on a measured specific gravity of the high dielectric constant filler, the specific gravity of the unsintered polytetrafluoroethylene, and the relative weight fractions of the unsintered polytetrafluoroethylene and the high dielectric constant filler; and wherein the dielectric substrate has a dielectric constant of greater than or equal to 11.5 as determined at a frequency of 10 GHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.