Etching method, etching solution used in same, and production method for semiconductor substrate product
US10435794B2 · kind B2 · utility
1Cited by
2References
26Claims
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Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching solution which contains a non-halogen acidic compound into contact with the second layer and selectively removing the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.