Patent · US Active

Semiconductor pressure sensor including improved structure and integrated sensor chip

US10436663B2 · kind B2 · utility

1Cited by
1References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 28, 2014
Grant dateOct 8, 2019
Priority date
Expiry dateMar 8, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L19/147
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A pressure sensor has a housing, an air lead-in hole, a pressure lead-in hole, an inner cavity, a sensor chip, a lead frame and a cover plate. One end of the air lead-in hole is in communication with the inner cavity of the housing, and the other end of the air lead-in hole is in communication with the air; the pressure lead-in hole is perpendicularly disposed at the center of the upper surface of the housing, two steps are disposed on the upper surface of the inner cavity, and a horizontal surface-mounted device surface is disposed on each of the steps. The center of the sensor chip is aligned with the centers of the pressure lead-in hole, and the lower end of the pressure lead-in holes are in communication with the cavity of the sensor chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.