High performance chemical and bio sensors using metal oxide semiconductors
US10436746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2017 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Aug 29, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/552
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Electrochemical and bio sensors using metal oxide semiconductors and method of making the same are described herein. The sensor includes a gate electrode, a dielectric layer over the gate electrode, a channel layer over the dielectric layer, and source and drain electrodes formed on the channel layer to provide a field effect transistor structure. The channel layer is a metal oxide semiconductor film that has a substantially uniform thickness of at least 3 nm thick and less than 10 nm thick. The metal oxide semiconductor film is functionalized with molecules attached thereto that are open to make contact with a fluid for detection of at least one component or at least one physical or chemical property of the fluid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.