Crystalline semiconductor film, plate-like body and semiconductor device
US10439028B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2015 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Jul 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.