Power semiconductor device and method of manufacturing power semiconductor device
US10439056B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
Abstract
A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n−-type column region, p−-type column regions, a base region, trenches, gate insulation films, gate electrodes, source regions, interlayer insulation films, contact holes, metal plugs, p+-type diffusion regions, a source electrode and a gate pad electrode. An active element part includes an n−-type column region between a predetermined p−-type column region disposed closest to a gate pad part and a predetermined n−-type column region disposed closest to the gate pad part among the n−-type column regions which are in contact with the trenches. The present invention provides a power semiconductor device which can satisfy a demand for reduction in cost and downsizing of electronic equipment, can lower ON resistance while maintaining a high withstand voltage, and can possess a large breakdown resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.