Thin-film transistor (TFT) and manufacturing method thereof

US10439070B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• South China University of Technology · CN

Inventors

• Liangchen Yan · Beijing, CN
• Guangcai Yuan · Beijing, CN
• Xiaoguang Xu · Beijing, CN
• Lei Wang · Singapore, SG
• Junbiao Peng · Beijing, CN
• Linfeng LAN · Longbeilingcun, CN

Key dates

• Filing date: May 11, 2016
• Grant date: Oct 8, 2019
• Expiry date: May 11, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02258
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.