Photodetector with reduced dark current

US10439082B2 · kind B2 · utility

Assignee

• SOCIÉTÉ FRANÇAISE DE DÉTECTEURS INFRAROUGES—SOFRADIR · FR

Inventors

• Laurent Rubaldo · Fontaine, FR
• Nicolas Pere Laperne · Grenoble, FR
• Alexandre Kerlain · Antony, FR
• Alexandru Nedelcu · Bourg-la-Reine, FR

Key dates

• Filing date: Sep 15, 2016
• Grant date: Oct 8, 2019
• Expiry date: Sep 15, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/146

Abstract

The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.