Thermoelectric material, and preparation method therefor and application thereof
US10439120B2 · kind B2 · utility
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Key dates
| Filing date | Dec 29, 2014 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Jan 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present application discloses a thermoelectric material, which contains CsAg5Te3 crystal material. At 700K, the thermoelectric material has an optimum dimensionless figure-of-merit ZT as high as 1.6 and a high stability, and the thermoelectric material can be recycled. The present application also discloses a method for preparing the CsAg5Te3 crystal material. The CsAg5Te3 crystal material is one-step synthesized by a high-temperature solid-state method, using a raw material containing Cs, Ag and Te, so that the high-purity product is obtained while the synthesis time is greatly shortened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.