Methods of forming patterns using photomask including light-shielding portion having a recessed portion
US10444621B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | May 3, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | May 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photomask layout includes: a substrate region; a lower stepped region at a region of the substrate region; and a pattern region at least partially crossing the lower stepped region and including at least one notch portion at an area overlapping the lower stepped region. A method of forming a pattern is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.