Method of processing surface of polysilicon and method of processing surface of substrate assembly
US10446410B2 · kind B2 · utility
0Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Mar 7, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.