Method of fabricating compound semiconductor device structures having polycrstalline CVD diamond
US10446468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2019 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Feb 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating compound semiconductor device structures having polycrystalline CVD diamond. The method includes: providing a substrate that has a layer of single crystal compound semiconductor material; forming a bonding layer on a surface of the substrate, the bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm; and growing a layer of polycrystalline diamond on the bonding layer using a chemical vapor deposition technique. The effective thermal boundary resistance at the interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m2K/GW. The layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm2V−1s−1; and a sheet resistance of no more than 700 Ω/square.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.