Super-saturation current field effect transistor and trans-impedance MOS device
US10446547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2019 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45246
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.