Photodetector

US10446601B2 · kind B2 · utility

Assignee

• SONY SEMICONDUCTOR SOLUTIONS CORPORATION · JP

Inventors

• Yusuke Otake · Yokohama, JP
• Akira Matsumoto · Yokohama, JP
• Junpei YAMAMOTO · Tokyo, JP
• Ryusei NAITO · Nagasaki, JP
• Masahiko Nakamizo · Yokohama, JP
• Toshifumi Wakano · Yokohama, JP

Key dates

• Filing date: Oct 18, 2017
• Grant date: Oct 15, 2019
• Expiry date: Oct 18, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8063

Abstract

A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode (105) and a cathode (101). The cathode is in a well region (103) of the first substrate. The first pixel includes an isolation region (108) that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region (107a) between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.