Semiconductor device and manufacturing method thereof
US10446671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2017 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Nov 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.