Photoelectric conversion device and method for manufacturing same
US10446698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Jun 7, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photoelectric conversion device includes, on one principal surface of a semiconductor substrate, a first conductivity-type region, a second conductivity-type region, and a boundary region which is in contact with each of the first conductivity-type region and the second conductivity-type region to separate these two regions. A first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extending over the boundary region. A second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extending over the boundary region. An insulating layer is disposed over the entire boundary region. A first electrode is disposed over the entire first conductivity-type region and extending over the boundary region, and a second electrode is disposed over the second conductivity-type region. The second electrode is not disposed over a region where the first conductivity-type semiconductor layer is formed, and thus is separated from the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.