Patent · US Active

Microstructure enhanced absorption photosensitive devices

US10446700B2 · kind B2 · utility

16Cited by

46References

40Claims

0Family size

Assignee

W&W Sens Devices, Inc. · US

Inventors

Shih-Yuan Wang · Palo Alto, US
Shih-Ping Wang · Los Altos, US
M. Saif Islam · Mountain View, US

Key dates

Filing date	Oct 30, 2017
Grant date	Oct 15, 2019
Priority date	—
Expiry date	Oct 30, 2037

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/547
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.