Method for manufacturing CIGS thin film for solar cell
US10446703B1 · kind B1 · utility
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18Claims
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Key dates
| Filing date | Jun 29, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Jun 29, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.