Patent · US Active

Two-dimensional layered material quantum well junction devices

US10446705B2 · kind B2 · utility

1Cited by

3References

6Claims

0Family size

Assignee

KONICA MINOLTA LABORATORY U.S.A., INC. · US

Inventor

Jun Amano · Hillsborough, US

Key dates

Filing date	Jul 30, 2015
Grant date	Oct 15, 2019
Priority date	—
Expiry date	Jul 30, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A quantum well device includes a first layer of a first two-dimensional material, a second layer of a second two-dimensional material, and a third layer of a third two-dimensional material disposed between the first layer and second layer. The first layer, the second layer, and the third layer are adhered predominantly by van der Waals force.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.