Semiconductor device and semiconductor device package including the same
US10446715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2017 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Dec 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/852
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.