Optoelectronic semiconductor chip

US10446717B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Attila Molnar · Vadnais Heights, US

Key dates

• Filing date: May 9, 2016
• Grant date: Oct 15, 2019
• Expiry date: May 13, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/814

Abstract

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-type connection contact, wherein a first trench extending at least partially into the p-doped semiconductor layer is arranged below the p-type connection contact, wherein an electrically insulating first blocking element arranged at least partially below the p-type connection contact and at least partially within the trench is arranged at least between the n-doped semiconductor layer and the p-type connection contact, and wherein the electrically insulating first blocking element is configured to prevent a direct current flow between the p-type connection contact and the p-doped and n-doped semiconductor layers and the active layer.