Fabrication method of vertical light-emitting diode
US10446718B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 11, 2017 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Nov 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
A fabrication method of a vertical light-emitting diode, such as an infrared light-emitting diode, includes heating the reaction chamber during growth of the reflective layer to pre-diffuse the metal molecules of the reflective layer into the epitaxial layer. As a result, the diffusion of the metal molecules in the reflective layer into the epitaxial layer during high-temperature fusion of the reflective layer and the epitaxial layer slows down, and the blackness level of conventional ohm contact holes is reduced.
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