Electro-optical device with asymmetric, vertical current injection ohmic contacts
US10447006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2017 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Mar 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.