Methods for growing a crystal ingot with reduced dislocations from a crucible
US10450670B2 · kind B2 · utility
5Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Nov 30, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1052
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for growing a reduced dislocation crystal ingot in an ingot growing system are disclosed. The system has a first crucible with a first base and a first sidewall extending upward from the first base to define an outer cavity. The method includes placing a weir in the outer cavity, placing a second crucible on the weir, placing feedstock material into the outer cavity, and melting the feedstock material to allow movement of the melt from the outer cavity inward of an intermediate cavity and into an inner cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.