Junction region between two waveguides and associated method of production
US10451802B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Apr 3, 2019 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Apr 3, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region which includes a bulge region. The bulge region is defined two successive etching operations using two distinct etch masks, where the first etching operation is a partial etch and the second etching operation is a complete etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.