Patent · US Active

Junction region between two waveguides and associated method of production

US10451802B2 · kind B2 · utility

0Cited by
1References
7Claims
0Family size

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Key dates

Filing dateApr 3, 2019
Grant dateOct 22, 2019
Priority date
Expiry dateApr 3, 2039

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region which includes a bulge region. The bulge region is defined two successive etching operations using two distinct etch masks, where the first etching operation is a partial etch and the second etching operation is a complete etch.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.