Terahertz antenna and method for producing a terahertz antenna

US10453680B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Roman Dietz · Berlin, DE
• Thorsten Göbel · Berlin, DE
• Björn Globisch · Berlin, DE
• William Masselink · Urbana, US
• Mykhaylo Petrovych Semtsiv · Berlin, DE

Key dates

• Filing date: Feb 10, 2017
• Grant date: Oct 22, 2019
• Expiry date: Feb 10, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02631
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 1×1018 cm−3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200° C. and not more than 500° C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.