Short pulse fiber laser for LTPS crystallization
US10453691B2 · kind B2 · utility
1Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Mar 6, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Laser pulses from pulsed fiber lasers are directed to an amorphous silicon layer to produce a polysilicon layer comprising a disordered arrangement of crystalline regions by repeated melting and recrystallization. Laser pulse durations of about 0.5 to 5 ns at wavelength range between about 500 nm and 1000 nm, at repetition rates of 10 kHz to 10 MHz can be used. Line beam intensity uniformity can be improved by spectrally broadening the laser pulses by Raman scattering in a multimode fiber or by applying varying phase delays to different portions of a beam formed with the laser pulses to reduce beam coherence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.