Semiconductor device and method for fabricating the same
US10453745B2 · kind B2 · utility
1Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 2016 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | May 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.