Method for detecting thinning of an integrated circuit substrate via its rear face, and corresponding integrated circuit
US10453808B2 · kind B2 · utility
2Cited by
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12Claims
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Key dates
| Filing date | Sep 12, 2018 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Sep 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/129
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic integrated circuit includes a semiconductor substrate having a rear face. A device for detecting a thinning of the semiconductor substrate via its rear face is formed by a p-n junction that is biased into conduction. Thinning of the substrate is detected by monitoring a current flowing through the p-n junction, and comparing that current to a threshold. In the event the compared current indicates no thinning of the semiconductor substrate, the circuitry for biasing and comparing is deactivated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.