Methods of providing semiconductor devices and semiconductor devices thereof
US10453893B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Dec 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a method. The method can include: providing a carrier substrate; forming a first device material over the carrier substrate; and after forming the first device material over the carrier substrate, transforming the first device material into a second device material. Meanwhile, the transforming the first device material into the second device material can include: causing a cationic exchange in the first device material; and causing an anionic exchange in the first device material. The causing the cationic exchange in the first device material and the causing the anionic exchange in the first device material can occur approximately simultaneously. Other embodiments of related methods and systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.