Semiconductor device
US10453916B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 18, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | May 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate with a first conductivity type; a semiconductor layer with a second conductivity type formed on the semiconductor substrate; a drain region with the second conductivity type and a source region with the second conductivity type formed to be spaced apart from each other in a surface region of the semiconductor layer; a drain buffer region with the second conductivity type formed in the semiconductor substrate directly under the drain region and in the semiconductor layer; a conductivity type well region with the second conductivity type formed on the semiconductor layer between the drain region and the drain buffer region; and a drain metal formed on the drain region to be electrically connected to the drain region and to overlap the well region in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.