Heterojunction bipolar transistor with counter-doped collector region and increase collector dependent breakdown voltage
US10453919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Nov 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/891
Abstract
A bipolar transistor is supported by a single-crystal silicon substrate including a collector connection region. A first epitaxial region forms a collector region doped with a first conductivity type on the collector connection region. The collector region includes a counter-doped region of a second conductivity type. A second epitaxial region forms a base region of a second conductivity type on the first epitaxial region. Deposited semiconductor material forms an emitter region of the first conductivity type on the second epitaxial region. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.