Oxide thin film transistor display substrate, manufacturing method thereof, and display device
US10453966B2 · kind B2 · utility
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2References
17Claims
0Family size
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Key dates
| Filing date | May 4, 2018 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | May 4, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure provides in some embodiments an oxide TFT display substrate, a manufacture method thereof and a display device. The oxide TFT display substrate includes a first region at least corresponding to a semiconducting region of an oxide TFT and a second region other than the first region. The method includes steps of: forming, after the formation of the oxide TFT, a SiON layer at least covering the first region; and forming a SiNx layer covering the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.