Light emitting diode

US10453992B2 · kind B2 · utility

Assignee

• XIAMEN SANAN OPTOELECTRON CO., LTD. · CN

Inventors

• Yuan Zheng · Madison, US
• Jiansen ZHENG · Xiamen, CN
• Mingyue WU · Xiamen, CN
• Chilun CHOU · Xiamen, CN
• Cai-hua Qiu · Xiamen, CN
• Xiao Luo · Cupertino, US
• Feng-Yu Lin · Sichuan, CN
• Shuiqing LI · Xiamen, CN
• Chaoyu WU · Xiamen, CN
• Kunhuang CAI · Xiamen, CN

Key dates

• Filing date: Dec 31, 2017
• Grant date: Oct 22, 2019
• Expiry date: Jan 11, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8242

Abstract

An AlGaInP light-emitting diode includes from bottom up a substrate, a distributed Bragg reflector (DBR) reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.