Controlling dopant concentration in correlated electron materials

US10454026B2 · kind B2 · utility

Assignee

• Arm Limited · GB

Inventors

• Lucian Shifren · San Jose, US
• Kimberly Gay Reid · Austin, US
• Gregory Munson Yeric · Austin, US

Key dates

• Filing date: Dec 6, 2016
• Grant date: Oct 22, 2019
• Expiry date: Dec 6, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In embodiments, after formation of the one or more CEM traces, a spacer may be deposited in contact with the one or more CEM traces. The spacer may operate to control an atomic concentration of dopant within the one or more CEM traces by replenishing dopant that may be lost during subsequent processing and/or by forming a seal to reduce further loss of dopant from the one or more CEM traces.