Patent · US Active

Optoelectronic component and method for producing an optoelectronic component

US10454057B2 · kind B2 · utility

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Key dates

Filing dateFeb 22, 2016
Grant dateOct 22, 2019
Priority date
Expiry dateFeb 22, 2036

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

An optoelectronic component is provided with a carrier; a zinc oxide layer arranged on the carrier and having the first and second regions, wherein the first region is a first electrode structure which is doped with aluminum so that the first region is transparent and electrically conductive; an organic optically functional layer structure arranged at least partially over the first electrode structure; and a second electrode structure arranged at least partially over the organic optically functional layer structure. The first and second electrode structures electrically contact the organic optically functional layer structure. The zinc oxide layer has a lower doping in the second region than the first electrode structure. The zinc oxide layer is configured in the second region as a varistor layer structure, which is arranged between the first and second electrode structures and contacts the two electrode structures. The varistor layer structure adjoins the optically transparent first region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.