Patent · US Active

Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof

US10454447B2 · kind B2 · utility

6Cited by
16References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 30, 2018
Grant dateOct 22, 2019
Priority date
Expiry dateJul 30, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H9/64
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

Embodiments of a Surface Acoustic Wave (SAW) device and methods of fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate, wherein a thickness of the piezoelectric layer is less than twice a transducer electrode period of the at least one interdigitated transducer. Using the piezoelectric layer on the carrier substrate suppresses acoustic radiation into the bulk, thereby improving the performance of the SAW device. Further, by utilizing quartz for the carrier substrate, additional advantages of small viscous losses, small permittivity, and small thermal sensitivity are achieved. Still further, as compared to Silicon, the use of quartz for the carrier substrate eliminates resistive losses.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.