Conductivity based on selective etch for GaN devices and applications thereof
US10458038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Nov 24, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24997
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.