RF impedance matching circuit and systems and methods incorporating same
US10460912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2018 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Aug 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/473
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor processing tool includes a plasma chamber and an impedance matching circuit. The matching circuit includes a first electronically variable capacitor having a first variable capacitance, a second electronically variable capacitor having a second variable capacitance, and a control circuit. The control circuit is configured to determine a variable impedance of the plasma chamber, determine a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor, and generate a control signal to alter at least one of the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively. An elapsed time between determining the variable impedance of the plasma chamber to when RF power reflected back to the RF source decreases is less than about 150 μsec.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.