Patent · US Active

Semiconductor module

US10461042B2 · kind B2 · utility

0Cited by
4References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 31, 2016
Grant dateOct 29, 2019
Priority date
Expiry dateJan 31, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor module includes: a first substrate having a first insulating substrate and a first conductor layer; a power device part having a first electrode, a second electrode and a gate electrode; a second substrate having a second insulating substrate, a second conductor layer and a third conductor layer wherein a hole is formed in the second insulating substrate, the second conductor layer has a bonding portion and a surrounding wall portion; an inner resin portion; a control IC; and an outer resin portion, wherein the first substrate, the power device part, the second substrate and the control IC are stacked in this order, a connector is disposed in the inside of the hole, and the gate electrode is electrically connected to a control signal output terminal of the control IC through a connector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.