Method for manufacturing a FinFET device
US10461080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2018 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Aug 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A method for manufacturing a semiconductor device is provided. In the method for manufacturing a semiconductor device, at first, a semiconductor substrate of a wafer is etched to form at least one fin. Then, an insulation structure is formed around the fin. Thereafter, the fin is recessed. Then, an epitaxial channel structure is epitaxially grown over the recessed fin. Thereafter, a portion of the epitaxial channel structure over a top surface of the insulation structure is removed. Then, a non-contact-type cleaning operation is performed to clean a top surface of the wafer after removing said portion of the epitaxial channel structure. Thereafter, the top surface of the wafer is cleaned using hydrogen fluoride after removing said portion of the epitaxial channel structure. Then, the insulation structure is recessed, such that the epitaxial channel structure protrudes from the recessed insulation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.