Display device and method of manufacturing the same
US10461141B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 9, 2018 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Oct 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
A display device includes a gate insulating layer disposed on a channel region of a semiconductor layer. A gate electrode is disposed on the gate insulating layer over the channel region of the semiconductor layer. A source electrode is disposed in direct contact with the source region of the semiconductor layer and a drain electrode is disposed in direct contact with a drain region of the semiconductor layer. A passivation layer is disposed on the gate electrode, the source electrode, and the drain electrode. The passivation layer is in direct contact with semiconductor layer in a region between the source electrode and the gate electrode, and is in direct contact with the semiconductor layer in a region between the gate electrode and the drain electrode. The first gate electrode, the first source electrode, and the first drain electrode comprise a same layer and a same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.