Patent · US Active

Semiconducting component

US10461160B2 · kind B2 · utility

0Cited by

6References

8Claims

0Family size

Assignee

Institutt for Energiteknikk · NO

Inventors

Alexander Ulyashin · Hagen, DE
Smagul Karazhanov · Lillestrøm, NO
Arve Holt · Leirsund, NO

Key dates

Filing date	Mar 28, 2016
Grant date	Oct 29, 2019
Priority date	—
Expiry date	Mar 28, 2036

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This invention relates to an electronic semiconductive component comprising at least one layer (2,3) of a p-type or n-type material, wherein the layer of a said p- or n-type material is constituted by a metal hydride having a chosen dopant. The invention also relates to methods for producing the component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.