Structure and formation method of semiconductor device with metal gate stacks
US10461171B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Apr 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A method for forming a semiconductor device structure includes forming a first dummy gate stack and a second dummy gate stack over a semiconductor substrate and forming a dielectric layer over the semiconductor substrate to surround the first dummy gate stack and the second dummy gate stack. The method includes removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench in the dielectric layer and removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench in the dielectric layer. The method includes partially removing the first metal gate stack, the second metal gate stack, and the dielectric layer to form a recess. The method includes forming an insulating structure to partially or completely fill the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.