Semiconductor device

US10461223B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Yung-Fu Chang · Ithaca, US
• Hsin-Chan CHUNG · Hsinchu, TW
• Hung-Ta Cheng · Hsinchu, TW
• Wen-Luh Liao · Hsinchu, TW
• Shih-Chang Lee
• Chih-Chiang Lu · New Taipei, TW
• Yi-Ming Chen · Hsinchu, TW
• Yao-Ning Chan · Hsinchu, TW
• Chun-Fu Tsai · Hsinchu, TW

Key dates

• Filing date: Sep 12, 2018
• Grant date: Oct 29, 2019
• Expiry date: Sep 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .