Resistive random access memory

US10461252B2 · kind B2 · utility

Assignee

• NATIONAL SUN YAT-SEN UNIVERSITY

Inventors

• Ting-Chang Chang · Hsinchu, TW
• Kuan-Chang Chang
• Tsung-Ming Tsai
• Chih-Cheng Shih
• Chih-Hung Pan · Taichung, TW

Key dates

• Filing date: Jul 19, 2016
• Grant date: Oct 29, 2019
• Expiry date: Jul 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.