Etchant composition and method of manufacturing a thin film transistor substrate by using the same
US10465296B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jan 25, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jun 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.