Patent · US Active

Light source with quantum dot layer

US10465861B1 · kind B1 · utility

0Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 13, 2016
Grant dateNov 5, 2019
Priority date
Expiry dateJan 13, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8515
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A light source is realized in a wall portion and a base portion forming a flexible structure, a the wall portion having a plurality of inward facing LEDs thereupon, a bottom edge of the wall portion being adjacent to an edge of the wide portion. The resulting well is subsequently filled with a material to form an optical cavity, the height of the resultant optical cavity being matching a top edge of the wall portion. The top surface of the optical cavity is spin coated with a thin layer of quantum dots which serve to shift a wavelength of light emitted from the LEDs. Finally, a protective layer is applied to fix and protect the thin layer of quantum dots. Thus, a light source is realized which can reliably provide light at a specific wavelength defined by the interaction between the LEDs and quantum dots.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.